SMF C3NiT: GaN RF HEMTs and MMIC Technology
| Diarienummer | |
| Koordinator | Gotmic AB |
| Bidrag från Vinnova | 333 000 kronor |
| Projektets löptid | augusti 2020 - augusti 2021 |
| Status | Avslutat |
| Utlysning | Kompetenscentrum |
Viktiga resultat som projektet gav
High-performance monolithic microwave integrated circuits (MMICs) for the W-band (75-110 GHz) and D-band (110-170 GHz) are needed in next generation radar/imaging and telecom systems. Conventional MMIC technologies based on e.g. GaAs or SiGe cannot be used due to limited output power. This project focused on the development of MMICs based on GaN technology, offering substantially improved output power at high frequencies. We successfully demonstrated a 60-GHz GaN power amplifier MMIC fabricated at Chalmers MC2. Work is ongoing to further extend the frequency range of the MMICs.
Långsiktiga effekter som förväntas
The commercialization of these GaN MMICs will lead to a unique product offering based on a largely Swedish supply chain. This will strengthen the growth and competitiveness of the local electronics industry. European system manufacturers will also benefit from having a local high performance GaN MMIC supplier, as most potential competitors are US-based companies restricted by International Trades in Arms Regulation (ITAR).
Upplägg och genomförande
Work packages: 1 Project Management 2 Product Specification 3 MMIC Design (Evaluation of design concepts / topologies. Design and simulation of the MMICs) 4 MMIC Fabrication (Optimization of HEMT devices for MMICs) 5 MMIC Test and Verification