SiC Substrate Enlargement Project
| Reference number | |
| Coordinator | Kiselkarbid i Stockholm AB |
| Funding from Vinnova | SEK 1 867 933 |
| Project duration | May 2020 - August 2023 |
| Status | Completed |
| Venture | Innovation projects in enterprises |
| Call | Innovation projects in small and medium-sized companies - autumn 2019 |
Important results from the project
The aim of this project was enlargement of SiC crystals to 200mm diameter and growth and production of 200mm substrates. With the help of this project, KISAB has successfully grown 200mm SiC substrates and became the first company worldwide that produces 200mm SiC substrates nearly free from basal plane dislocations.
Expected long term effects
The result of this project is a well-developed process for production of the first BPD-free 200mm SiC substrate. With the help of this project, KISAB succeeded in producing 200mm SiC substrates with low bow and warpage and nearly free from basal plane dislocations. KISAB has been in contact with most major semiconductor device manufacturers around the globe and received substantial interest and orders from all of them. Many companies in the semiconductor industry are willing to invest in KISAB to establish a larger factory for mass-production of KISAB’s SiC wafers.
Approach and implementation
The main aim of this project was the development of enlargement processes for growth of 200mm wafers in FSGP reactors. Five engineers from KISAB and one engineer from DISCO were involved in this project part-time. The growth processes were performed at KISAB and boules with different diameters were separated by DISCO. Graphite parts and poly-crystalline source materials were purchased from third parties. In general, the project goal was achieved over a period longer than first estimated