Nanowire LEDs for a Green Energy Efficient Lighting Technology

Important results from the project

In this project, entitled Nanowire LEDs for Green Energy Efficient Lighting Technology, GLO AB proposes to further develop and commercialize a novel nanowire-based blue light emitting diode (LED) in the gallium nitride material system for general illumination. GLOs light emitting nanowire (LEN) is grown on silicon substrates and is anticipated to be a completely new type of illumination device that will provide greater energy efficiency and lower cost as compared to incandescent and fluorescent light sources and traditional planar LEDs.

Expected long term effects

The project is expected to bring a new level of testing and characterization methods suitable for use in development of nanowire based LEDs and, ultimately, a nanowire LED product for general illumination. Product development will be done by GLO in collaboration with LU and application support from E.ON . GLOs LED lighting device is expected to be more cost effective and energy efficient than any comparable device currently on the market.

Approach and implementation

This project will establish a chip designed for optimized utilization along with a standardized characterization toolbox adopted for nanowire LEDs. The project can roughly be divided into Design/Innovation, Implementation, and Validation. 1.Design a handpicked toolset of nanowire LED characterization methods that will satisfy the following needs: oCompleteness The set should give a good insight in critical functionalities in the device and of the intended functionality of full product. oReliability: The methods should give clear and unambiguous output in a consistent manner when fully developed. oSwiftness and ease of use: To fit into a high speed production environment the methods need to be straightforward to use and should not add time consuming feedback loops. 2.Design a first version of a big chip device suitable for use in public and residential lighting, e.g.streetlights. 3.Implement and improve characterization methods on nanowire devices and partial nanowire device structures, but preferably on chip devices as close to end product as possible. 4.Validate chip design 5.Validate and document characterization methods.