High-transparency Schottky contacts in a silicon Josephson field-effect transistor, TransJoFET

Purpose and goal

The main focus is on the interface between the superconducting source and drain contact layer and the semiconducting channel of the Si Josephson FET. The project will result in i) a superconducting Schottky diode with optimized Schottky barrier height to demonstrate feasibility of the superconductor-semiconductor contact at mK temperature; and ii) a superconducting Si Josephson FET with highly transparent contacts fabricated by a CMOS-compatible process.

Expected effects and result

The Project Hi-TransJoFET is to contribute to establishment of the key technology for Si-based quantum bits as a platform for implementation of quantum computing on a large scale. Superconductor-semiconductor contacts are one of the key components to in the develop development of the Si-JoFET quantum technology. The ultimate goal is to capitalize on the established CMOS manufacturing methods for quantum computing hardware.

Planned approach and implementation

The project will be carried out at Uppsala University. Prof. Shi-Li Zhang, the PI for the project, has a long track-record in silicon process and device technology. The team consists of five scientists with a good spread in expertise. Silicon-FET fabrication technology established in the cleanroom facility of Myfab-Uppsala will be utilised for the device manufacturing. Furthermore, ion implantation steps will be carried out at the Ion Technology Centre in Uppsala. Finally, mK measurements will be carried out in collaboration with our research partners at Leti/CEA in France.