E!13123 SiCTAA Ascatron
Reference number | |
Coordinator | II-VI Kista AB |
Funding from Vinnova | SEK 2 156 740 |
Project duration | March 2019 - November 2020 |
Status | Completed |
Venture | International Joint Calls |
Important results from the project
The project aimed to develop the manufacturing chain of silicon carbide (SiC) power semiconductors for use in the aerospace industry, both for effective protection circuits in the event of lightning and compact power electronics for “More Electric Engine”. The project came one step closer to functioning SiC devices, but a few more development cycles are required until the production chain is in place. Airplane engine manufacturer Rolls-Royce, semiconductor manufacturer Ascatron, and electronics manufacturer TT Electronics discuss the next steps.
Expected long term effects
In the SiCTAA project, Ascatron manufactured SiC device chips such as a SiC diode with current limitation and avalanche capability, and a SiC JFET for high temperature operation for compact power inverters. The device design was provided by Durham University. Ascatron processed more than 10 SiC wafers and delivered SiC device chips to the project partners TT Electronics and CSA Catapult for packaging, discrete and in power modules. The project coordinator Rolls Royce evaluated the packaged devices and will build them into electrical systems after the end of the project.
Approach and implementation
The project was mostly led by the British side. Ascatron as the only project partner outside the UK has been the middle part of the manufacturing chain. We did not participate in the discussions of approach and implementation. The design and specifications came from Rolls Royce and Durham University. We did the manufacturing process, mask set, material, and SiC device processing; plus we evaluated the devices at the on-wafer level. For Ascatron´s project results it would have been better, if Ascatron could participate in the design work and if the project would focus on one device type.