Chips JU 2023 RIA Move2THz

Purpose and goal

The main objective of the Move2THz project is to strengthen the European infrastructure for InP based semiconductor devices. This will be achieved by developing a new approach to provide the semiconductor material. The idea is to use a technology that can transfer thin layers of bulk InP to larger wafers of inexpensive Si carrier wafers (material name: InPoSi). This will make it possible to take advantage of the modern machinery used in large wafer Si semiconductor processing. The swedish partners will focus on adapting their InP HEMT/MMIC processes to the InPoSi wafers.

Expected effects and result

The project will lead to a strengthened infrastructure for InPoSi based technologies where the entire value chain from the semiconductor wafer to finished semiconductor circuits will be available in Europe for HEMT, HBT and opto components. Move2THz will enable scaling up to 12" wafers which will lead to better competitiveness against other semiconductor technologies. We expect comparable transistor performance for InPoSi as for bulk InP, but with new opportunities for scaling and utilization of silicon process techniques and integration against other technologies such as CMOS.

Planned approach and implementation

Low Noise Factory (LNF) will focus on the development of an MMIC process compatible with InPoSi. The development will include both improvement of the existing process and adaptations necessary for the silicon carrier. Chalmers University of Technology (Chalmers) will focus on the development of InP HEMT transistors on InPoSi. Chalmers will develop an InP HEMT process on InPoSi and do comparative studies on InP HEMT on InP bulk wafers. Together, Chalmers and LNF will carry out extensive modelling, measurement and evaluation of InPoSi.